Effect of PECVD SiNx/SiOyNx–Si interface property on surface passivation of silicon wafer
Jia Xiao-Jie1, Zhou Chun-Lan1, †, , Zhu Jun-Jie2, Zhou Su1, Wang Wen-Jing1
       

Seff of the post-RTA SiOyNx (30 nm)/SiNx (70 nm) stacks at a corona charge injection level of Δn = 7 × 1014 cm−3 through QSSPC. The SiOyNx layer is deposited at different deposition temperatures, with R = 1.54.