Effect of PECVD SiN<bold><italic>x</italic></bold>/SiO<bold><italic>y</italic></bold>N<bold><italic>x</italic></bold>–Si interface property on surface passivation of silicon wafer

Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer

Jia Xiao-Jie¹, Zhou Chun-Lan^{1, †,}, Zhu Jun-Jie², Zhou Su¹, Wang Wen-Jing¹

Summary of the electrical parameters of the SiO_yN_x (30 nm)/SiN_x (70 nm) stacks, including Q_f and D_it, with the single SiN_x (100 nm) film as reference. The SiO_yN_x layers are deposited at different deposition temperatures of 100 °C–400 °C, with R = 1.54.