Effect of PECVD SiN<bold><italic>x</italic></bold>/SiO<bold><italic>y</italic></bold>N<bold><italic>x</italic></bold>–Si interface property on surface passivation of silicon wafer

Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer

Jia Xiao-Jie¹, Zhou Chun-Lan^{1, †,}, Zhu Jun-Jie², Zhou Su¹, Wang Wen-Jing¹

Energy distribution of D_it in the band gap for the post-RTA SiO_yN_x (10 nm)/SiN_x (70 nm) stacks with the single SiN_x (100 nm) layer as reference. The SiO_yN_x layers are deposited at different R values with the deposition temperature of 130 °C.