Effect of PECVD SiN<bold><italic>x</italic></bold>/SiO<bold><italic>y</italic></bold>N<bold><italic>x</italic></bold>–Si interface property on surface passivation of silicon wafer

Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer

Jia Xiao-Jie¹, Zhou Chun-Lan^{1, †,}, Zhu Jun-Jie², Zhou Su¹, Wang Wen-Jing¹

Compositions of the SiO_yN_x layer of the SiO_yN_x (30 nm) / SiN_x (70 nm) stacks influence the hysteresis in C–V curves. The complete measurement circle is inversion–accumulation–inversion. In the SiO_y/SiN_x stacks, (a) R = 77. In the SiO_yN_x/SiN_xstacks, (b) R = 11.11, (c) R = 1.54, (d) R = 0.83, and (e) R = 0.54. The reference is (f) the single SiN_x (100 nm) layer.