Effect of PECVD SiN<bold><italic>x</italic></bold>/SiO<bold><italic>y</italic></bold>N<bold><italic>x</italic></bold>–Si interface property on surface passivation of silicon wafer

Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer

Jia Xiao-Jie¹, Zhou Chun-Lan^{1, †,}, Zhu Jun-Jie², Zhou Su¹, Wang Wen-Jing¹

Multifrequency (10 kHz to 1 MHz) C–G–V characteristics of an MIS capacitor utilizing post-RTA SiO_yN_x/SiN_x stacks. (a) The C–V curves were measured in inversion–accumulation direction. (b) The peaks of G/ω–V curves lie in the range of depletion.