Electronic structure of O-doped SiGe calculated by DFT + <italic>U</italic> method

Electronic structure of O-doped SiGe calculated by DFT + U method

Zhao Zong-Yan^{1, 2, †,}, Yang Wen³, Yang Pei-Zhi³

Lay-resolutions of density of states of SiGe (110) surface: O@Vac, in comparison with those of bulk SiGe.