A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

Fu Qiang^{1, 2, †,}, Zhang Wan-Rong¹, Jin Dong-Yue¹, Zhao Yan-Xiao¹, Wang Xiao¹

Comparison of plot f_T–J_C for traditional SOI SiGe HBT among the cases of different T_BOX values.