A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT
Fu Qiang1, 2, †, , Zhang Wan-Rong1, Jin Dong-Yue1, Zhao Yan-Xiao1, Wang Xiao1
       

Absolute values of the base current versus VCE for traditional SOI SiGe HBT and standard SiGe HBT on bulk silicon, respectively.