A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT
Fu Qiang1, 2, †, 
, Zhang Wan-Rong1, Jin Dong-Yue1, Zhao Yan-Xiao1, Wang Xiao1
, Zhang Wan-Rong1, Jin Dong-Yue1, Zhao Yan-Xiao1, Wang Xiao1 Electron concentration profiles in collector region for traditional SOI SiGe HBT and standard SiGe HBT on bulk silicon, respectively.
