Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

Shen Yanjiao¹, Chen Jianhui^{1, †,}, Yang Jing¹, Chen Bingbing¹, Chen Jingwei¹, Li Feng², Dai Xiuhong¹, Liu Haixu¹, Xu Ying¹, Mai Yaohua^{1, ‡,}

(a) The fractions of c-Si, a-Si:H, and void in the thin film and (b) the lifetime and implied V_oc as a function of d_hp/(d_hp + d_lp).