Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD
Shen Yanjiao1, Chen Jianhui1, †, 
, Yang Jing1, Chen Bingbing1, Chen Jingwei1, Li Feng2, Dai Xiuhong1, Liu Haixu1, Xu Ying1, Mai Yaohua1, ‡,
, Yang Jing1, Chen Bingbing1, Chen Jingwei1, Li Feng2, Dai Xiuhong1, Liu Haixu1, Xu Ying1, Mai Yaohua1, ‡, The deposition rates of the thin films on different substrates at high pressure and low pressure.
