Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD
Shen Yanjiao1, Chen Jianhui1, †, 
, Yang Jing1, Chen Bingbing1, Chen Jingwei1, Li Feng2, Dai Xiuhong1, Liu Haixu1, Xu Ying1, Mai Yaohua1, ‡,
, Yang Jing1, Chen Bingbing1, Chen Jingwei1, Li Feng2, Dai Xiuhong1, Liu Haixu1, Xu Ying1, Mai Yaohua1, ‡, Imaginary part of the dielectric function for thin films on (a) silicon wafer substrates and (b) glass substrates. The inset is the imaginary part of the dielectric function for the hp a-Si:H thin layer with different thickness.
