Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD
Shen Yanjiao1, Chen Jianhui1, †, 
, Yang Jing1, Chen Bingbing1, Chen Jingwei1, Li Feng2, Dai Xiuhong1, Liu Haixu1, Xu Ying1, Mai Yaohua1, ‡,
, Yang Jing1, Chen Bingbing1, Chen Jingwei1, Li Feng2, Dai Xiuhong1, Liu Haixu1, Xu Ying1, Mai Yaohua1, ‡, Models used to analyze SE data of samples in this work.
