High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H<sub>2</sub>O as an oxidizer

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H₂O as an oxidizer

Lin Jia-Yong¹, Pei Yan-Li^{1, †,}, Zhuo Yi¹, Chen Zi-Min², Hu Rui-Qin¹, Cai Guang-Shuo¹, Wang Gang^{1, ‡,}

Cross-sectional HRTEM image (a) and the major element EDX line scan analysis spectra (b) of the H₂O-AZO-TCL/n⁺-InGaN/p-GaN interface.