High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H<sub>2</sub>O as an oxidizer

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H₂O as an oxidizer

Lin Jia-Yong¹, Pei Yan-Li^{1, †,}, Zhuo Yi¹, Chen Zi-Min², Hu Rui-Qin¹, Cai Guang-Shuo¹, Wang Gang^{1, ‡,}

I–V characteristics of LEDs with various TCLs. The inset shows the I–V characteristics of H₂O-AZO-, O₂-AZO-, and ITO-TCLs contacts on p-GaN with n⁺-InGaN contact layer.