High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H
2
O as an oxidizer
Lin Jia-Yong
1
, Pei Yan-Li
1, †,
, Zhuo Yi
1
, Chen Zi-Min
2
, Hu Rui-Qin
1
, Cai Guang-Shuo
1
, Wang Gang
1, ‡,
Transmittance spectra of H
2
O-AZO-, O
2
-AZO-, and ITO-TCLs on a quartz substrate.