Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

Zhu Ge¹, Zheng Fu^{2, 3}, Wang Chao^{1, 3}, Sun Zhibin³, Zhai Guangjie³, Zhao Qing^{1, †,}

(a) Photon detection efficiency and dark count rate as a function of excess bias voltage. (b) Noise equivalent power versus excess bias voltage. The dashed horizontal lines denote the range of noise equivalent power at low V_ex. The inset graph shows the P_ap performance with the increased V_ex.