Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

Zhu Ge¹, Zheng Fu^{2, 3}, Wang Chao^{1, 3}, Sun Zhibin³, Zhai Guangjie³, Zhao Qing^{1, †,}

(a) Schematic diagram of the experimental setup for studying the bias-dependent timing jitter of a sinusoidally gated InGaAs/InP avalanche photodiode. H-Amp: high power amplifier; BPF: band pass filter; GPQC: gated passive quenching circuit; BEF: band elimination filter; LN-Amp: low noise amplifier; LPF: low pass filter; ATT: optical attenuator; TCSPC: time-correlated single-photon counting module. (b) Oscilloscope trace of the extracted avalanche signal after the second LN-Amp.