Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal–oxide–semiconductor field-effect transistors with tunnel diode body contact structures
Lu Kai1, 3, Chen Jing1, †, 
, Huang Yuping2, Liu Jun2, Luo Jiexin1, Wang Xi
, Huang Yuping2, Liu Jun2, Luo Jiexin1, Wang Xi (a) Cross-sectional schematic of the proposed TDBC SOI MOSFET structure. (b) Band diagram for the n+ source/p+/p-body/n+ drain structure.
