Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal–oxide–semiconductor field-effect transistors with tunnel diode body contact structures
Lu Kai1, 3, Chen Jing1, †, 
, Huang Yuping2, Liu Jun2, Luo Jiexin1, Wang Xi
, Huang Yuping2, Liu Jun2, Luo Jiexin1, Wang Xi Manson’s unilateral power gain as a function of frequency at 300 K and 77 K for TB and TDBC devices at
