Equivalent distributed capacitance model of oxide traps on frequency dispersion of <italic>C</italic>–<italic>V</italic> curve for MOS capacitors

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C–V curve for MOS capacitors

Lu Han-Han¹, Xu Jing-Ping¹, Liu Lu^{1, †,}, Lai Pui-To^{2, ‡,}, Tang Wing-Man³

Relation between the trap distance from the interface and the interface-state time constant τ₀ with ωτ (x) = 1.