Equivalent distributed capacitance model of oxide traps on frequency dispersion of <italic>C</italic>–<italic>V</italic> curve for MOS capacitors

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C–V curve for MOS capacitors

Lu Han-Han¹, Xu Jing-Ping¹, Liu Lu^{1, †,}, Lai Pui-To^{2, ‡,}, Tang Wing-Man³

Relationship between C_it and ω with N_it = 5 × 10¹² cm⁻²·eV⁻¹ and different τ₀ (a) and effect of the interface-state density on the total gate capacitance (b).