Equivalent distributed capacitance model of oxide traps on frequency dispersion of <italic>C</italic>–<italic>V</italic> curve for MOS capacitors

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C–V curve for MOS capacitors

Lu Han-Han¹, Xu Jing-Ping¹, Liu Lu^{1, †,}, Lai Pui-To^{2, ‡,}, Tang Wing-Man³

Comparison between the proposed model (Eq. (13)) and the distributed circuit model in Ref. [19]. The parameters used are N_bt = 2 × 10²⁰ cm⁻³·eV⁻¹, C_ox = C_s = 2 μF/cm², t_ox = 4.5 nm, κ = 6 nm⁻¹, and τ₀ = 1 × 10⁻⁷ s.