Equivalent distributed capacitance model of oxide traps on frequency dispersion of <italic>C</italic>–<italic>V</italic> curve for MOS capacitors

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C–V curve for MOS capacitors

Lu Han-Han¹, Xu Jing-Ping¹, Liu Lu^{1, †,}, Lai Pui-To^{2, ‡,}, Tang Wing-Man³

Equivalent circuit for the traps in the oxide. C(x) is the total capacitance at x, C_s is the semiconductor capacitance, ɛ₀ɛ_ox/Δx is the oxide capacitance in Δx, and C_ox is the oxide capacitance of the MOS capacitor.