Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits
Liu Xiaoxian, Zhu Zhangming†, 
, Yang Yintang, Ding Ruixue, Li Yuejin
, Yang Yintang, Ding Ruixue, Li Yuejin The per-unit-length of RLGC parameters of GSG-type TSV: (a)
