Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits
Liu Xiaoxian, Zhu Zhangming†, , Yang Yintang, Ding Ruixue, Li Yuejin
       

Per-unit-length of CTSV as a function of the applied voltage VTSV for TSV: (a) air-gap TSV. (b) SiO2-based TSV.