High performance photodetectors based on high quality InP nanowires
Yang Yan-Kun, Yang Tie-Feng, Li Hong-Lai, Qi Zhao-Yang, Chen Xin-Liang, Wu Wen-Qiang, Hu Xue-Lu, He Peng-Bin, Jiang Ying, Hu Wei, Zhang Qing-Lin, Zhuang Xiu-Juan, Zhu Xiao-Li†, , Pan An-Lian‡,
       

Band diagrams of InP photodetector under bias and illumination when different gate voltages were applied: (a) VGS = 0 V; (b) VGS < 0 V and (c) VGS > 0 V. The EF is the new quasi-Fermi level and ΦB is the Schottky barrier height. The full dots and the empty dots represent the photo-generated electrons and holes, respectively.