High performance photodetectors based on high quality InP nanowires

Yang Yan-Kun, Yang Tie-Feng, Li Hong-Lai, Qi Zhao-Yang, Chen Xin-Liang, Wu Wen-Qiang, Hu Xue-Lu, He Peng-Bin, Jiang Ying, Hu Wei, Zhang Qing-Lin, Zhuang Xiu-Juan, Zhu Xiao-Li^†,, Pan An-Lian^‡,

(a) Plots of I_DS versus V_GS (V_DS = 0.1 V) under different laser intensities. (b) Relationship between photocurrent and laser intensity at various V_GS. The curves are fitted by the power law. (c) Responsivity and calculated EQE as a function of V_GS recorded at V_DS = 0.1 V under laser intensity of 103.1 mW/cm², respectively.