High performance photodetectors based on high quality InP nanowires
Yang Yan-Kun, Yang Tie-Feng, Li Hong-Lai, Qi Zhao-Yang, Chen Xin-Liang, Wu Wen-Qiang, Hu Xue-Lu, He Peng-Bin, Jiang Ying, Hu Wei, Zhang Qing-Lin, Zhuang Xiu-Juan, Zhu Xiao-Li†, , Pan An-Lian‡,
       

(a) The I–V plots of the device in the dark and under 520 nm laser at different illumination intensities. (b) Responsivity and calculated EQE versus laser intensity at VDS = 0.1 V and VGS = 0 V. (c) Time-resolved switching behavior of the device under laser intensity of 103.1 mW/cm2 at VDS = 0.1 V. (d) Enlarged rise and fall sides over circle of 60–70 s.