High performance photodetectors based on high quality InP nanowires

Yang Yan-Kun, Yang Tie-Feng, Li Hong-Lai, Qi Zhao-Yang, Chen Xin-Liang, Wu Wen-Qiang, Hu Xue-Lu, He Peng-Bin, Jiang Ying, Hu Wei, Zhang Qing-Lin, Zhuang Xiu-Juan, Zhu Xiao-Li^†,, Pan An-Lian^‡,

(a) Schematic and SEM image of a back-gate single NW FET. (b) Output characteristics of the device at various V_GS. (c) Transfer curves measured at V_DS of 0.1 V.