Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process
Yu Shu-Zhen1, †, 
, Song Yan1, 2, Dong Jian-Rong1, Sun Yu-Run1, Zhao Yong-Ming1, 3, He Yang1, 3
, Song Yan1, 2, Dong Jian-Rong1, Sun Yu-Run1, Zhao Yong-Ming1, 3, He Yang1, 3 SEM image of alloyed AuGe/Ni/Au contact surface after annealing at (a) 400 °C, (b) 460 °C, (c) 490 °C, and (d) 550 °C for 15 min.
