Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Yu Shu-Zhen^{1, †,}, Song Yan^{1, 2}, Dong Jian-Rong¹, Sun Yu-Run¹, Zhao Yong-Ming^{1, 3}, He Yang^{1, 3}

Measured ρ_c as a function of (a) post-annealing temperature and (b) post-annealing time for AuGe/Ni/Au–graphene contact pre-annealed at 300 °C for 1 h.