Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Yu Shu-Zhen^{1, †,}, Song Yan^{1, 2}, Dong Jian-Rong¹, Sun Yu-Run¹, Zhao Yong-Ming^{1, 3}, He Yang^{1, 3}

Measured ρ_c for Ti/Pt/Au– and AuGe/Ni/Au–graphene contacts post-annealed at various temperatures for 15 min.