Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Yu Shu-Zhen^{1, †,}, Song Yan^{1, 2}, Dong Jian-Rong¹, Sun Yu-Run¹, Zhao Yong-Ming^{1, 3}, He Yang^{1, 3}

(a) Resistance of each circular as a function of ln(R/r) and the linear fitting for AuGe/Ni/Au–graphene contact post-annealed at 490 °C for 15 min. (b) Post-annealing method effects on specific contact resistivity (ρ_c) for Ti/Au and AuGe/Ni/Au contacts without pre-annealing.