Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process
Yu Shu-Zhen1, †, 
, Song Yan1, 2, Dong Jian-Rong1, Sun Yu-Run1, Zhao Yong-Ming1, 3, He Yang1, 3
, Song Yan1, 2, Dong Jian-Rong1, Sun Yu-Run1, Zhao Yong-Ming1, 3, He Yang1, 3 Optical microscope image of the fabricated metal–graphene CTLM patterns on 300 nm SiO2/Si substrate.
