Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure
Liu Yi1, Zhu Kai-Gui1, 4, Zhong Hui-Cai2, Zhu Zheng-Yong3, †, , Yu Tao1, Ma Su-De1
       

Perpendicular (red line) and in-plane (blue line) M–H loops of Si/SiO2/Mo(5)/MgO(2)/CoFeB(1.1)/Mo(2) (in nm) at (a) as-deposited and (b) post-annealed at 300 °C, respectively.