Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction
Wu Haiyan†, , Ma Ziguang†, , Jiang Yang, Wang Lu, Yang Haojun, Li Yangfeng, Zuo Peng, Jia Haiqiang, Wang Wenxin, Zhou Junming, Liu Wuming, Chen Hong‡,
       

Schematic of the light-to-electricity conversion process in device A. (a) Schematic diagram of energy band, absorption, and transport process of photo-generated carriers under open-circuit conditions. Under incident photon 1 interaction, a high-excitation state free electron–hole pair is generated, with the electron and hole separately escaping from the quantum well and generating a photovoltage. Under equilibrium conditions, most photoexcited free carriers such as e1 and h1 relax to ground state e2 and h2 to emit light. (b) Schematic diagram of energy band, absorption, and transport process of photo-generated carriers under short-circuit conditions. Under incident photon 1 interaction, high excitation state photo-excited free electron e and hole h directly escape from the QWs and generate a photocurrent.