Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction
Wu Haiyan†, 
, Ma Ziguang†, , Jiang Yang, Wang Lu, Yang Haojun, Li Yangfeng, Zuo Peng, Jia Haiqiang, Wang Wenxin, Zhou Junming, Liu Wuming, Chen Hong‡,
, Ma Ziguang†, , Jiang Yang, Wang Lu, Yang Haojun, Li Yangfeng, Zuo Peng, Jia Haiqiang, Wang Wenxin, Zhou Junming, Liu Wuming, Chen Hong‡, PL spectra and light-to-electricity conversion results for device B under resonant excitation of 405 nm laser. (a) The PL spectra under open-circuit and 3 V bias conditions with a 27 mW excitation power. Compared with that under open-circuit conditions, the integrated PL intensity under 3 V bias is only 0.18% less. (b) The excitation-power-dependent integrated PL intensities and peak wavelengths under open-circuit and 3 V bias conditions. The integrated PL intensity under 3 V bias is only a few per millage less for the same excitation power.
