Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction
Wu Haiyan†, 
, Ma Ziguang†, , Jiang Yang, Wang Lu, Yang Haojun, Li Yangfeng, Zuo Peng, Jia Haiqiang, Wang Wenxin, Zhou Junming, Liu Wuming, Chen Hong‡,
, Ma Ziguang†, , Jiang Yang, Wang Lu, Yang Haojun, Li Yangfeng, Zuo Peng, Jia Haiqiang, Wang Wenxin, Zhou Junming, Liu Wuming, Chen Hong‡, (a) Schematic of device A. The InGaN/GaN MQWs are the active region and are sandwiched between p-type and n-type GaN; each MQW consists of a 2.5 nm InGaN well and a 12 nm GaN barrier layer. (b) Schematic of device B, which is deposited similarly, except that the p-GaN is replaced by an equal thickness of n-GaN.
