Threshold resistance switching in silicon-rich SiO<sub><italic>x</italic></sub> thin films

Threshold resistance switching in silicon-rich SiO_x thin films

Chen Da, Huang Shi-Hua^†,

Temperature dependence of R_LRS at 0.4 V for the Cu/SRO/Si device with 39-nm thickness SRO film annealed at 1073 K. The measurement was carried out about one year after completing the device.