Threshold resistance switching in silicon-rich SiO<sub><italic>x</italic></sub> thin films

Threshold resistance switching in silicon-rich SiO_x thin films

Chen Da, Huang Shi-Hua^†,

Fitting analysis of the I–V curves. (a) Double-logarithmic plot of the as-deposited device in HRS. The inset of panel (a) is a Schottky emission plot. (b) Double-logarithmic plot of the as-deposited device in LRS. (c) and (d) The positive bias I–V characteristic of the 39 nm-SiO_x film annealed at 1073 K in coordinates corresponding to Fowler–Nordheim tunneling in HRS and LRS, respectively. (e) and (f) Schottky emission presentations of the I–V curves of the 78 nm-SiO_x film annealed at 1073 K in HRS and LRS, respectively.