Threshold resistance switching in silicon-rich SiO<sub><italic>x</italic></sub> thin films

Threshold resistance switching in silicon-rich SiO_x thin films

Chen Da, Huang Shi-Hua^†,

Typical I–V curves of the threshold RS behavior for Cu/SRO/Si devices without annealing and annealed at 673 K, 873 K, and 1073 K, respectively. The thickness of these SRO thin films is 39 nm.