Electronic properties of SnTe-class topological crystalline insulator materials

Wang Jianfeng¹, Wang Na¹, Huang Huaqing¹, Duan Wenhui^{1, 2, 3, †,}

(a), (b) The effect of [001]-oriented strain on the SnTe bulk. (a) BZs of SnTe for primitive cell (in black) and conventional cell along the [001] direction (in blue). (b) Band gap of bulk SnTe at the R point as a function of in-plane biaxial strain. (c)–(f) The effect of [111]-oriented strain on the SnTe bulk. (c) Primitive cell (in black) and conventional cell along the [111] direction (in red). (d) BZs of SnTe for primitive cell (in black) and conventional cell along the [111] direction (in green). (e), (f) Strain-dependent bulk band-gap evolution at the A (red squares) and L (blue circles) points under in-plane and out-of-plane strains, respectively. In (b), (e), and (f), the pink, light green, and white regions indicate the TCI, TI, and NI phases, respectively. Figures (c)–(f) are adapted with permission from Ref. [84], and copyrighted by the American Physical Society.