Electronic properties of SnTe-class topological crystalline insulator materials
Wang Jianfeng1, Wang Na1, Huang Huaqing1, Duan Wenhui1, 2, 3, †,
       

Formation energy as a function of Fermi level for native point defects in (a) SnTe and (b) PbTe under Sn/Pb rich and Te-rich conditions. The slope of each segment indicates the charge on the defect. Zero of the Fermi level is set to be the VBM of the host, and the Fermi level range spans the bulk gap.[64]