Electronic properties of SnTe-class topological crystalline insulator materials
Wang Jianfeng1, Wang Na1, Huang Huaqing1, Duan Wenhui1, 2, 3, †,
       

The ARPES measurements of the (001) surface states of SnTe-class materials. (a) ARPES intensity for SnTe along the cuts A–E in the surface BZ and mapping in a 2D wave-vector plane at various EB.[44] (b) The temperature dependence of the ARPES data for the (001) surface of Pb0.77Sn0.23Se monocrystals. They clearly show the evolution of the gapped surface states (for T ≥ 100 K) into the Dirac-like states on lowering the temperature (T = 9 K).[45] (c) Up panel: ARPES iso-energetic contour mapping (EB = 0.02 eV) of Pb0.6Sn0.4Te covering the first surface BZ. Down panel: ARPES dispersion map along the mirror line direction. Inset: measured spin polarization profile is shown by the green and blue arrows on top of the ARPES iso-energetic contour at binding energy EB = 0.06 eV.[46]