Electronic properties of SnTe-class topological crystalline insulator materials
Wang Jianfeng1, Wang Na1, Huang Huaqing1, Duan Wenhui1, 2, 3, †,
       

(a) Band gap of SnTe at the X point as a function of film thickness. The yellow region indicates a 2D TCI phase. (b) Edge states with mirror eigenvalues of an 11-layer SnTe film (left) and electric-field-induced gap (right). (c) Proposed topological transistor device for using an electric field to tune charge and spin transport. Without the electric field, the spin-filtered edge states are gapless and it is in the “on” state (left). Applying a perpendicular electric field, the edge states are gapped and it is in the “off” state (right).[88]