Electronic properties of SnTe-class topological crystalline insulator materials |
(a)–(c) DFT-calculated surface band structures of SnTe (111) surface under no strain, in-plane biaxial strain of −2% and out-of-plane uniaxial strain of −2%, respectively. The horizontal dotted lines denote the Fermi levels under different strains, and all bands have set the Fermi level in the unstrained system as the zero reference for energy. (d) Schematic of a strain-induced nanostructure in the SnTe (111) surface grown on a substrate. (e) Schematic of the energy spectra in the strain-induced nanostructure shown in (d). (f), (g) Transmission probabilities |