Electronic properties of SnTe-class topological crystalline insulator materials

Wang Jianfeng¹, Wang Na¹, Huang Huaqing¹, Duan Wenhui^{1, 2, 3, †,}

First-principles band structures of a 51-layer SnTe (001) nanomembrane under biaxial strain of −1%, 0, and +1%. Insets schematically indicate the shift of Dirac points in the surface BZ under strain.