Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
He Yun-Long1, Wang Chong1, †, 
, Mi Min-Han1, Zheng Xue-Feng1, Zhang Meng2, Zhao Meng-Di1, Zhang Heng-Shuang1, Chen Li-Xiang2, Zhang Jin-Cheng1, Ma Xiao-Hua1, 2, Hao Yue1, 2
, Mi Min-Han1, Zheng Xue-Feng1, Zhang Meng2, Zhao Meng-Di1, Zhang Heng-Shuang1, Chen Li-Xiang2, Zhang Jin-Cheng1, Ma Xiao-Hua1, 2, Hao Yue1, 2 Gate leakage current for three samples.
