Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire
Munguía-Rodríguez M1, Betancourt-Riera Ri2, Betancourt-Riera Re2, †, , Riera R1, Nieto Jalil J M3
       

The emission spectrum for an electron Raman scattering process in double quantum well wire for incident photon energy ħωl = 0.28 eV and polarization , where: (a) the dashed line corresponds to ra = 8.0 nm, rb = 10.0 nm, and rc = 15.0 nm, while the solid line corresponds to ra = 9.0 nm, rb = 10.0 nm, and rc = 15.0 nm; (b) the dashed line corresponds to ra = 8.0 nm, rb = 10.0 nm, and rc = 16.0 nm, while the solid line corresponds to ra = 8.0 nm, rb = 12.0 nm, and rc = 17.0 nm. In panel (b), the dashed line has multiplied by 10.